產品目錄
二維半導體材料(TMD)
2吋WS2 on Sapphire
4吋MoS2 on SiO2/Si
4吋WS2 on Sapphire
各種半導體磊晶(可客製化)
GaN HEMT on Si or SiC or Sapphire
應用領域:
高功率power switch (Vb>650V) l高頻功率應用 Fmax> 40GHz
AlN on sapphire
應用領域:
晶格常數匹配優勢，適合做GaN 磊晶成長及GaN HEMT應用 l適合磊晶成長MoS2, WS2等二維材料
客製化外延磊晶產品
>AlN on Sapphire
>GaN on Sapphire
>4H-SiC on Sapphire
>4H-SiC on Si
>GaN HEMTs on Sapphire
>GaN HEMT on 4H-SiC
Wafer size: 4 inch, 6 inch.
單晶基板
N type 4H-SiC
Wafer size: 2~8 inch
AlN single crystal substrate
III-V wafer:GaSb, InP, InSb, InSb, GaSb
Wafer size: 2inch, 4inch, 6inch.
III-V wafer
III-V wafer:GaSb, InP, InSb, InSb, GaSb
Wafer size: 2inch, 4inch, 6inch.
Sapphire
Sapphire wafers(C-axis, A-plane, M-axis)
Wafer size: 2~8 inch
AlN ceramic substrate
III-V wafer:GaSb, InP, InSb, InSb, GaSb
Wafer size: 2inch, 4inch, 6inch.
Semi-Insulating 4H-SiC
Wafer size: 2~8 inch
各式實驗耗材
SiC coated Graphite trays plates for SiC wafer ICP etching or MOCVD Suscept
Graphite crucible
High Purity 99.99% metal Granules Pellets: 3*3 mm
Graphite Boat
Quartz Tube
